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| AP01L60T Advanced Power Electronics Corp. Low Gate Charge Fast Switching Characteristics Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 160mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is universally used for all commercial-industrial applications. G D TO-92 S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 30 160 100 300 0.83 -55 to 150 -55 to 150 Units V V mA mA mA W Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 150 Unit /W Data & specifications subject to change without notice 200530031 AP01L60T Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.8 0.8 4.0 1.0 1.1 6.6 5.0 11.7 9.2 170 30.7 5.1 Max. Units 12 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= 30V ID=1A VDS=480V VGS=10V VDD=300V ID=1A RG=3.3,VGS=10V RD=300 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V IS=160mA, VGS=0V Min. - Typ. - Max. Units 160 1.2 mA V Forward On Voltage 3 Notes: 1.Pulse width limited by safe operating area. 3.Pulse width <300us , duty cycle <2%. AP01L60T 1.5 1 T A =25 C ID , Drain Current (A) o 10V 6.0V 5.5V 5.0V ID , Drain Current (A) T A =150 o C 0.75 10V 5.0V 1 4.5V 0.5 0.5 V GS =4.5V V GS =4.0V 0.25 0 0 12 24 36 0 0 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =0.5A V GS =10V 1.1 Normalized BVDSS (V) 2 Normalized RDS(ON) 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C ) Fig 3. Normalized BV DSS v.s. Junction Temperature 10 4 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 3 T j = 150 o C 0.1 T j = 25 o C VGS(th) (V) 2 1 -50 IS (A) 0.01 0 0.4 0.8 1.2 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP01L60T 16 1000 f=1.0MHz VGS , Gate to Source Voltage (V) I D =1.0A V DS =480V 12 Ciss 100 8 C (pF) Coss 10 4 Crss 0 1 0 1.5 3 4.5 6 1 10 19 28 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1.2 40 ID , Drain Current (A) 0.9 30 0.6 PD (W) 25 50 75 100 125 150 20 0.3 10 0 0 0 50 100 150 T A , Case Temperature ( o C ) T A , Case Temperature ( o C) Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation Case Temperature VDS 90% QG 10V QGS 10% VGS td(on) tr td(off) tf Charge Q QGD VG Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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